Wettable MOSFETs boost reliability in ADAS systems

July 25, 2019 //By Nick Flaherty
ROHM has launched a range of MOSFETs measuring 1.6 x 1.6mm that use a wettable flank technique to give more reliability in manufacturing.
ROHM has launched a range of MOSFETs measuring 1.6 x 1.6mm that use a wettable flank technique to give more reliability in manufacturing.

The RV4xxx series is AEC-Q101 qualified in a DFN1616 package, ensuring automotive-grade reliability and performance under extreme conditions. 

In recent years, the growing number of vehicle safety and convenience systems such as ADAS cameras has emphasized the challenge of limited space to accommodate these systems and spurring the demand for smaller components.

The larger currents required by high resolution cameras in advanced vehicle systems is driving the use of MOSFETs that provide low ON resistance and less heat generation. For example, at a current and power consumption of 2.0A and 0.6W, respectively, conventional automotive MOSFETs can reduce mounting area by 30% over diodes. However, adopting bottom electrode MOSFETs capable of providing excellent heat dissipation while still supporting large currents in an even smaller form factor makes it possible to decrease mounting area by as much as 78% compared with conventional SBDs and by as much as 68% compared with conventional MOSFETs.

To meet this need, bottom electrode type MOSFETs that can be miniaturized while maintaining high current are increasingly attracting attention. However, for automotive applications optical inspection is performed during the assembly process to ensure quality, but in the case of bottom electrode components solder height cannot be verified after mounting, making it difficult to confirm mounting conditions.


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