Wafer maker licenses GaN technology for power devices

January 24, 2020 //By Peter Clarke
Shin-Etsu licenses Qromis GaN technology
Qromis, a developer of techniques for depositing thin layers of wide-bandgap materials on substrates, has made a licensing agreement with Japanese wafer supplier Shin-Etsu. Qromis has also received equity investment from Japan.

Shin-Etsu Chemical Co. Ltd. (Tokyo, Japan) – which already supplies silicon, silicon-on-insulator and GaN-on-silicon wafers – has said it will expand its portfolio using QST substrate technology from Qromis Inc. (Santa Clara, Calif.).

The GaN market is expected to expand over the coming years with applications in RF and power  for automotive and 5G communications applications. Qromis technology enables 200mm-diameter CMOS fab friendly GaN-on-silicon wafers. The company claims the technology is scalable to 300mm wafers and the GaN surface is suitable for power / RF electronics, LED devices, advanced displays, sensors, and other emerging applications at an unmatched cost.

At the same time Sparx Group Co. Ltd. (Tokyo, Japan) has announced that its Mirai Creation Fund II has invested an undisclosed sum of money in Qromis. Qromis said it would use the money to enhance its technology, expand its product base and increase its customer base.

Qromis was founded in 2015 as Quora Technology Inc. by Cem Basceri (CEO) and Vladimir Odnoblyudov (CTO), who had previously worked at Bridgelux Inc. a developer semiconductor technology for solid-state lighting.

The company now has partnerships with Micron Technology Inc., Vanguard International Semiconductor (VIS) and Shin-Etsu.

Related links and articles:

www.qromis.com

www.shinetsu.co.jp

Related GaN wafer articles:


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