The EPC2206 and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80V DS and 100V DS ratings respectively. The new devices have completed AEC Q101 qualification testing and will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
The EPC2206 is an 80 V, 2.2 mΩ enhancement-mode FET with a pulsed current rating of 390 A in a 6.1mm x 2.3mm chip-scale package. The EPC2212 is a 100 V, 13.5 mΩ component with a pulsed current rating of 75 A in a 2.1mm x 1.6mm chip-scale package.
The EPC2206 is aimed at 48V bus power distribution to manage the power-hungry electronically-driven functions and features appearing on the latest cars. Electric start-stop, electric steering, electronic suspension, and variable speed air conditioning are a few examples.
The emergence of self-driving vehicles is driving additional demands from systems such as lidar, radar, camera, and ultrasonic sensors are placed upon the power distribution system accelerating the need for automobiles to move to a 48 V bus system. For 48 V bus systems, GaN devices like the EPC2206 increase efficiency, shrink size and weight and reduce system cost. The EPC2212 is aimed at driving the lasers in lidar systems as the FET can be triggered to create high-current with extremely short pulse widths. The short pulse width leads to higher resolution, and the higher pulse current allows the lidar system to discern objects at greater distances. These two characteristics, along with their tiny size and low cost, make eGaN FETs ideal for radar and ultrasonic sensors in addition to lidar in demanding automotive applications.
“These two automotive products are the next in what will be a constant stream of transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety. Our eGaN technology is faster, smaller, more efficient, lower cost, and more reliable than the aging silicon power MOSFET used in today’s vehicles,” said