Transphorm launches first automotive qualified GaN FETs

March 28, 2017 // By Nick Flaherty
Transphorm TPH3205WSBQA AEC-Q101 certified GaN FET
Transphorm's second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology has passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. These are the first such GaN FETs, says the company.

The TPH3205WSBQA offers an on-resistance of 49 mΩ in an industry standard TO-247 package. The part initially targets on-board charger (OBC) and DC to DC systems for plug-in hybrid electric vehicles (PHEVs) and battery electric vehicles (BEV). Today, OBCs are uni-directional (AC to DC) using standard boost topologies. As GaN FETs are bi-directional by nature, they are suitable for a bridgeless totem-pole power factor correction (PFC) topology so that a bi-directional OBC can then be designed to reduce the number of silicon devices and cost. 

“With the electrification of the automobile, the industry faces new system size, weight, performance, and cost challenges that can be addressed by GaN,” said Philip Zuk, Senior Director of Technical Marketing at Transphorm. “However, supplying this market means devices must meet the highest possible standards for Quality and Reliability, those set by the AEC. At Transphorm, we have a culture of Quality and Reliability. And, are proud to be leading the industry into the new era of in-vehicle power electronics.”

The automotive market is one of the fastest growing segments for all power semiconductors, with IHS Markit forecasting a $3 billion revenue by 2022. The company vertically integrates into the complete design and development cycle—innovating at the epi layer, adapting the fab process to the product, configuring the device and developing customer design tools and resources. This enables the company to deliver the industry’s only GaN devices with proven quality, reliability and intrinsic lifetime data extending beyond JEDEC requirements.

That approach played a critical role in achieving AEC-Q101 qualification. Transphorm’s GaN technology was subjected to a series of rigorous tests including parametric verification, high temperature reverse bias and high temperature gate bias. Devices receive a simple pass/fail rating and must successfully pass all modules to become qualified.

The 650V TPH3205WSBQA (49 mΩ) TO-247 FETs are currently in production and available for US$13.89 per 1000-unit quantities. 

transphormusa.com


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