The new silicon carbide devices provide higher levels of performance for data centre server, 5G base station, and electric vehicle designs. The UJ3C (general purpose) and UF3C (hard switched) series of FETs are used in power supplies, telecom rectifiers, and on-board chargers respectively.
The devices are aimed at designers who prefer a 3-lead, TO220 or D2PAK package option, yet are still looking to enhance power performance in power-factor correction circuits, LLC resonant converters, and phase-shifted full-bridge converters.
The UJ3C and UF3C FETs provide true “drop-in replacement” capability to significantly enhance system performance without the need to change gate drive voltage. As the parts combine a silicon MOSFET and SiC diode they can replace existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.
Both series of SiC FETs are based on UnitedSiC’s unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device that has standard gate-drive characteristics. As a result, existing systems can see a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In the case of new designs, the UnitedSiC FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size, and cost of passive components, such as magnetics and capacitors.
The three-leaded, industry-standard TO220-3L package offers enhanced thermal characteristics with UnitedSiC’s sintered-silver packaging technology. The UJ3C device has an RDS(on) values of 30 and 80mΩ, and the UF3C sees an RDS(on) of 40mΩ.
The three-leaded, industry-standard D2PAK-3L targets surface mount designs and is certified to IPC and JEDEC’s Moisture Sensitivity Level 1. New products available in this package include the UJ3C device with RDS(on) specs of 30 and 80mΩ, and UF3C devices with RDS(on) of 30 and 40mΩ.