ST moves to dominate silicon carbide : Page 2 of 2

March 28, 2019 //By Nick Flaherty
ST moves to dominate silicon carbide
ST has set out ambitious plans to dominate the silicon carbide power market for electric vehicles and other high voltage applications.

While the main use for SiC will be 650V MOSFETs  for inverters and energy recovery in electric cars as well as fast DC-DC chargers, 1200V and 1700V devices will be used in solar panel inverters and smart grid infrastructure, as well as data centre power.

The company is also developing gallium nitride technology that will be manufactured in Catania and Tours, France, by the end of 2019, says Monti.

The SiC and GaN devices will be supported by driver chips built on the bipolar-CMOS-DMOS (BCD) smart power process at fabs in Agrate, Italy, and at Catania, to provide the necessary inductive and capacitive galvanic isolation. “What we call drivers are built in the BCD technology where we have a 40 percent market share,” said Monti.

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