ST adds ROHM subsidiary as SiC wafer supplier

January 15, 2020 //By Nick Flaherty
STMicroelectronics has signed a multi-year deal with SiCrystal for silicon carbide (SiC) wafers at its fab in Catania
STMicroelectronics has signed a multi-year deal with SiCrystal, a subsidiary of Japanese competitor ROHM, to supply silicon carbide (SiC) wafers

The deal between ROHM and STMicroelectronics adds SiCrystal as a supplier of SiC wafers alongside Norstel, now fully owned by ST, and Cree.

ROHM claims SiCrystal is the leading supplier of SiC wafers in Europe. The $120m (€107m) deal covers 150mm wafers used to make SiC power chips at ST's fab in Catania, Italy, for automotive and industrial applications. 

“This additional long-term SiC substrate supply agreement comes on top of the external capacity we have already secured and the internal capacity we are ramping. It will enable ST to increase the volume and balance of the wafers we will need to meet the strong demand ramp-up from customers for automotive and industrial programs over the next years”, said Jean-Marc Chery, President and CEO of STMicroelectronics.

“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC wafers for many years. We are very pleased to enter into this supply agreement with our longstanding customer ST. We will continue to support our partner to expand silicon carbide business by ramping up wafer quantities continuously and by providing reliable quality at all times”, said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.

www.sicrystal.de

Related articles on SiC wafers


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.