ST adds embedded memory to BCD power processes

May 16, 2018 // By Peter Clarke
The roll out of phase-change memory as an embedded non-volatile memory option at STMicroelectronics NV (Geneva, Switzerland) continues with its inclusion in the company's BCD9 and BCD10 manufacturing processes.

BCD is a generic name for the mix of bipolar, CMOS and DMOS in a single process and is intended to combine analogue, digital and power circuitry. ST has persevered with BCD for smartpower over nearly thirty years and is up to its ninth generation of the process.

Benedetto Vigna, president of the analogue, MEMS and sensors (AMS) group, revealed the development at the ST Capital Markets day.

BCD9 is the current generation of smartpower process with a minimum geometry of 110nm and operating voltages of 1.8V and 8V to 60V. Vigna said BCD9 is in production but so far without the "ePCM" option. "We are qualifying PCM and increasing memory capacity. The memory is being qualified at 64kbytes with plans to go to 128 and 256kbytes," Vigna said.

BCD10 is the next generation smartpower process with minimum geometry of 90nm and voltages of 1.2V and 8V to 60V. This is due to enter production in 2020 Vigna said.

Related links and articles:

www.st.com

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