Infineon Technologies has launched a range of development boards and tools using silicon carbide SiC MOSFETs for motor drives .
The CoolSiC MOSFET Modular Application Design Kit (MADK) boards support motors of up to 7.5 kW. The EVAL-M5-IMZ120R-SIC is a 3-phase inverter board aiming at servo drive applications. Infineon provides schematics (PDF), list of parts (Excel), layout (Gerber) and a design package (Altium) to download. This allows the board to serve as a reference design.
For motor drive applications, silicon carbide reduces semiconductor power losses by up to 80 percent. Making use of this technology can lead to zero maintenance of drives since fans might not be needed for cooling. Additionally, it allows the integration of motor and drive with less complex cabling making inverter cabinets redundant.
The evaluation board was developed to support customers during their first steps designing applications with the CoolSiC MOSFET 1200 V in discrete packages (IMW120R045M1) and EiceDRIVER 1200 V isolated gate driver (1EDI20H12AH). The assembled discrete has a rated blocking voltage of 1200 V at a typical on-state resistance of 45 mΩ, the board supports all CoolSiC MOSFETs in 3pin and 4pin TO247 packages.
The evaluation board integrates a 3-phase rectifier EMI filter, current sensors, and protection features as well as thermal management and heatsink. All relevant analog and control signals are easily accessible with test pads. To ensure precise measurements the signals are isolated from the power part. The board is equipped with a 32-pin interface connector for all control signals, this M5 connector is fitting to the controller board XMC DriveCard 4400 (KIT_XMC4400_DC_V1). In combination, evaluation and control board make the motor run with little effort and within a short period.
The evaluation board EVAL-M5-IMZ120R-SIC can be ordered now. More information and the full design package are available at www.infineon.com/cms/en/product/evaluation-boards/eval-m5-imz120r-sic/
Related SiC articles
- Odyssey Semis aims to displace Silicon Carbide with GaN
- Boost for three phase PV inverter
- 1200V MOSFET cuts on resistance
Other articles on eeNews Europe