ROHM plans new building to boost SiC production

June 06, 2018 //By Nick Flaherty
ROHM plans new building to boost SiC production
ROHM is to construct a new building at its Apollo plant in Chikugo, Japan, to meet the growing demand for silicon carbide (SiC) power devices. 

ROHM recognized the potential of SiC early on, starting mass production of SiC power components such as SiC Schottky diodes and MOSFETs in 2010. In addition, ROHM was the first supplier to produce complete SiC power modules and SiC trench MOSFETs and introduced a vertically integrated production system throughout the group. This means that the company covers the entire manufacturing process from the SiC wafers through the devices to the packaging.

The company is targetting a leading market share for SiC wafers and components, which requires production capacity to be increased as well as boosting production efficiency by further increasing the wafer size and using the latest equipment. The new three-storey building at Apollo will increase the production area by approximately 11,000m². Detailed planning has just begun, construction is scheduled to begin in February 2019 and be completed by the end of 2020.

Market researchers expect the global SiC market to exceed $1bn by 2021, with the largest share coming from power supply applications such as power converters, battery chargers for electric vehicles and the power grid. However, the main inverter of electric vehicles also represents a significant part of the market potential for SiC components and are a target market for the company.

www.rohm.eu

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