Rohm adds SiC diode to hybrid IGBT

July 19, 2021 // By Nick Flaherty
Rohm adds SiC diode to hybrid IGBT
Rohm’s RGWxx65C series combined an IGBT with 650V SiC Schottky diode for cost sensitive applications.

Rohm has developed a hybrid IGBT with integrated 650V SiC Schottky barrier diode for electric vehicle charging and solar inverters.

The RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR are qualified under the AEC-Q101 automotive reliability standard and aimed at cost-sensitive high power applications such as onboard chargers and EV DC-DC converters.

The RGWxx65C series uses the low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss. As the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly. Both effects together result in up to 67 percent lower loss over conventional IGBTs and 24 percent lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in industrial and automotive applications.

The parts will be in mass production in December and samples are available now.

www.rohm.com/products/igbt/field-stop-trench-igbt?SearchWord=rgw

Related SiC articles 

Other articles on eeNews Power 


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.