Rad hard GaN joint venture for space applications

June 17, 2020 //By Nick Flaherty
Rad hard GaN joint venture for space applications
The EPC Space joint venture between EPC and VPT will develop and make rad hard GaN devices for space applications

Efficient Power Conversion (EPC) has teamed up with VPT on a joint venture for rad hard GaN transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.

EPC Space will design and manufacture the radiation hardened transistors and ICs for power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. These will be based around EPC’s enhancement mode GaN-on-silicon technology.

“VPT’s global leadership in power conversion solutions for avionics, military, and space applications is the perfect complement to EPC’s leadership in GaN-based power conversion devices,” said Alex Lidow, CEO and Co-Founder of EPC. “The joint venture is taking the superior performance of gallium nitride to the high reliability community offering electrical and radiation performance beyond the capabilities of the aging Rad Hard silicon MOSFET.”

VPT, part of the Heico Electronic Technologies Group, develops DC-DC converters and EMI filters for space, avionics and industrial applications for ESA and NASA well as BAE Systems, Thales, Lockheed Martin and Boein.

“EPC’s GaN technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. We are excited about this venture’s ability to provide mission-critical components and services to our high-reliability markets,” said Dan Sable, Founder and CEO of VPT,

Epc.space; epc-co.com;   www.vptpower.com

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