The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power wideband semiconductor devices is forecast to pass $1 billion in 2021 and top $5n by 2029 says a new report from market researcher Omdia.
The growth is driven by hybrid and electric vehicles, power supplies, and photovoltaic (PV) inverters.
Worldwide revenue from sales of SiC and GaN power wideband semiconductor devices of all kinds is projected to rise to $854m by the end of 2020, up from just $571m in 2018, according to Omdia’s latest report. Market revenue is expected to increase at a double-digit annual rate for the next decade, passing $5bn by 2029.
However these long-term market projection totals are about $1bn lower than last year to reflect lower demand after the Covid-19 pandemic. Despite this, the market is seeing new entrats such as Alpha and Omega Semiconductor and II-VI.
SiC Schottky diodes have been on the market for more than a decade, with SiC metal-oxide semiconductor field-effect transistors (SiC MOSFETs) and junction-gate field-effect transistors (SiC JFETs) appearing in recent years. SiC power modules are also becoming increasingly available, including hybrid SiC modules, containing SiC diodes with Si insulated-gate bipolar transistors (IGBTs), and full SiC modules containing SiC MOSFETs with or without SiC diodes.
SiC MOSFETs are proving very popular among manufacturers, with several companies from Infineon to Microchip already offering them. Several factors caused average pricing to fall in 2019, including the introduction of 650, 700 and 900 volt (V) SiC MOSFETs priced to compete with silicon superjunction MOSFETs, as well as increasing competition among suppliers.