Panasonic boosts GaN technology with integrated power switch

June 08, 2018 //By Nick Flaherty
Panasonic boosts GaN technology with integrated power switch
Panasonic is demonstrating its latest gallium nitride (GaN) technology at PCIM this week, include a protype of a highly integrated bi-directional switch.

The new single chip bi-directional (4-quadrant) GaN switch supports bi-directional current conduction as well as bi-directional high voltage isolation. This will reduce conduction losses and reduce the number of switching elements in a bi-directional switch, helping to reduce the size of power converters and increase the conversion efficiency.

The company has a range of 600V GaN transistors called X-GaN that are normally-off, current collapse free and use an ohmic gate contact preventing gate breakdown. It has designed industrial subsystems that can use the X-GaN devices, including a compact inverter and a DC-DC converter, as well as a range of application demonstrators and evaluation kits.

“Panasonic has developed high efficiency, compact GaN power devices with low heat generation suitable for different applications such as power supplies, HEV/EV and PV inverters and many others,” said Johannes Spatz, EVP Industrial Business, Panasonic Industry Europe. “Our GaN transistors and applications have become mass production items, demonstrating our broad range of options for different applications and our position at the forefront of this fast-moving market."

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