Odyssey Semis aims to displace SiC with GaN

September 02, 2020 //By Nick Flaherty
Odyssey Semis aims to displace SiC with GaN
Odyssey Semiconductor Technologies has developed a novel process modification that will allow gallium nitride (GaN) devices operating above 1000 V to displace silicon carbide (SiC) in electric vehicles.

A new stock started trading on a small market in the US this week.

Odyssey Semiconductor Technologies has developed a novel processing modification that will allow gallium nitride (GaN) devices operating above 1000 V. This could displace silicon carbide (SiC) in he fast growing market for electric vehicles, say the firm’s founders. With a small fab in Ithaca, New York, the company plans to use the pulsed laser annealing process to offer a foundry service.

The shares are listed on the smaller Venture OTCQB over-the-counter stock market in the US. The larger OTCQX hosts Chinese foundry SMIC, for example. 

"Odyssey Semiconductor's listing as a publicly traded company on the OTCQB marks an important milestone for our company," said Alex Behfar, Executive Chairman and Acting CEO of Odyssey Semiconductor. "We are proud of the accomplishments our team has made so far to develop GaN as the leading high voltage power switching semiconductor material, and we believe that the listing will provide the Company with broader market exposure and visibility, and enhance liquidity for our investors."

So far GaN devices have proven difficult to process using standard semiconductor processing methods, although Nexperia and Visic for example has been developing GaN parts for high power traction inverters. The process modification will take GaN into the 1kV market which is projected to reach over $3.5bn by 2025.

Last October the company acquired an integrated semiconductor design, fabrication, test, and packaging facility as well as associated tooling. The 10,000 sq. ft. fab is a mix of class 1,000 and class 10,000 clean space as well as tools for advanced semiconductor development and production with a capacity over 10,000 wafers/year.

Advanced lithography capabilities include i-line steppers adapted for handling small pieces up through 200 mm diameter wafers. High-throughput metal and dielectric deposition equipment, advanced etch and packaging tools will allow Odyssey to accelerate the development of its proprietary  1,000 V GaN


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