Perhaps indicating that numbers are a challenge for marketing electronic components, Nexperia is launching a range of 'application specific MOSFETs' (ASFETs) with specific parameters for certain applications.
The move is similar to the transition from 802.11ax WiFi to WiFi 6 - there is no change to the ujnderlying technology but an acceptance that the engineering detail is holding back more general acceptance in the market. This highlights the importance of power devices to a wider range of applications, from battery isolation and motor control to hot-swap and Power over Ethernet (PoE) applications.
The devices for each applicaiton area have a difference balance of parameters, from improvements in the Safe Operating Area (SOA) for hot-swap applications to higher maximum current ratings over 300 A for motor applications (see below for the range of MOSFET devices for different applications).
“As designers push the boundaries of performance, it is crucial to understand how the MOSFET will be used in the application. There are 100+ parameters on a regular MOSFET datasheet but usually only a few are critical in each project," said Chris Boyce, Senior Director for the Power MOSFETs Group at Nexperia.
"However, as the applications change, so do the critical parameters. We determine the performance of every element of our products; the core silicon technology, the chip design, the package and the manufacturing & test procedures. By keeping individual application requirements front and centre of our thinking, we can choose to optimise the parameters that matter most in a particular use-case, often at the expense of others of less relevance. In essence we have combined our proven MOSFET expertise with a broad understanding of applications so we can tailor products which offer the ultimate performance for a specific application or functionality.”
Nexperia plans to add to this ASFET category with a family of automotive products with guaranteed repetitive avalanche performance for driving inductive loads.
Currently this move is for silicon MOSFETs rather than its gallium nitride FETs.