Nexperia launches its first GaN FET

November 19, 2019 //By Nick Flaherty
Nexperia launches its first GaN FET
Nexperia's 650V GAN063-650WSA GaN FET has a gate-source voltage (VGS) of ±20 V and a temperature range of -55 to +175 °C and a low RDS(on) down to 60 mΩ.

Power and discrete specialist Nexperia has launched its first high power GaN FET transistor using gallium nitride (GaN) on silicon technology. 

“This is a strategic move for Nexperia into the high voltage area, and we can now deliver technology suitable for xEV power semiconductor applications," said Toni Versluijs, General Manager of Nexperia MOS Business Group. "Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications. The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”

Being able to successfully grow thick GaN epitaxial layers on large silicon substrates with the right epi-performance was key to enabling standard 150 mm (6 inch) fabs to be used for primary production. This delivers the scalability and cost reductions needed for volume production. Nexperia has also published detailed reliability figures for the device.

The 650V GAN063-650WSA has a gate-source voltage (VGS) of ±20 V and a temperature range of -55 to +175 °C. It features a low RDS(on) down to 60 mΩ for low losses and supports gih frequency switching for higher efficiency power designs. 

Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies. The GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon fabrication facilities.

A key point is that the FET is available in the industry-standard TO-247, allowing designers to use a familiar package and achieve higher performance.

The GAN063-650WSA GaN FET is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.

More information on the new GAN063-650WSA, including product specs and datasheet is available at  efficiencywins.nexperia.com/innovation/gan-introduction.html


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