Nexperia GaN FETs in distribution

September 10, 2020 //By Jean-Pierre Joosting
GaN FETS for reduce power loss in EVs, 5G and IoT
Shipping from Farnell, rugged GaN FETs from Nexperia feature easy gate drive, low RDS(on) and fast, stable switching for more efficient power conversion.

Farnell is shipping Nexperia’s range of second generation power GaN FETs that delivers improved density and efficient power usage in a small form factor, enabling the development of efficient systems at a lower cost, and providing the potential to transform power performance in electric vehicles.

These innovative GaN FETs provide benefits to design engineers as increased legislation, and the growing need to reduce C02 emissions, drive a shift to more efficient power conversion and increased electrification.

GaN technology overcomes many of the limitations of existing technologies, such as silicon based IGBTs and SiC, to deliver direct and indirect performance benefits to a whole range of power conversion applications. Within electric vehicles, GaN technology directly reduces power losses that can impact the range of a vehicle. More efficient power conversion also reduces the need for cooling systems to dissipate generated heat, reducing the vehicle’s weight and system complexity, in turn leading to a longer operating range or the same range with a smaller battery. Power GaN FETs are also well positioned for applications in data centers, telecom infrastructures, and industrial applications.

GaN FETs deliver superior performance in systems such as hard switching for AC-DC Totem pole PFC applications, LLC phase shift full-bridge (resonant or fixed frequency) for soft-switching applications, All DC-AC inverter topologies and AC-AC matrix converters using bidirectional switches.

Key benefits include:

  • Easy gate drive, low RDS(on), fast switching;
  • Excellent body diode (Low Vf), low Qrr;
  • High ruggedness;
  • Low dynamic RDS(on);
  • Stable switching;
  • Rugged gate bounce immunity (Vth ~ 4 V).

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