MagnaChip adds embedded flash to high voltage process technology

June 20, 2017 //By Nick Flaherty
MagnaChip adds embedded flash to high voltage process technology
MagnaChip Semiconductor has developed a 0.13 micron BCD process technology integrated with high-density embedded Flash memory for power management designs.

The Bipolar-CMOS-DMOS (BCD) process offers 40V power LDMOS and delivers 64K Bytes flash memory, making it suitable for programmable power management devices, wireless power chargers and USB-C power-delivery chips.

These devices increasingly need embedded non-volatile memory alongside power LDMOS for high-power requirements. The inclusion of embedded FLASH is crucial in order to minimize chip size.

For IoT and automotive applications, the process provides 1.5V and 5V CMOS devices with a very low leakage current level that enables low-power consumption with options for Hall sensors, varactors, inductors, and RF CMOS structures.

Embedded Flash IP, designed and verified by MagnaChip, reduces foundry customers' design time by providing proven intellectual property (IP) with a range of diverse memory densities. MagnaChip also verifies and provides key analogue intellectual property, such as ADC (Analog-to-Digital Converter), DAC (Digital-to-Analog Converter), LDO (Low Dropout Regulator), POR (Power On Reset), PLL (Phase Locked Loop), OSC (Oscillator), which reduces design time.

“The combination of analogue-based BCD and non-volatile memory is ideal for producing power management solutions and power ICs used in smartphones, IoT devices and for USB-C applications,” said YJ Kim, CEO of MagnaChip. "Our goal is to continue to develop specialized process technologies that meet the increasing needs for the application-specific solutions of our foundry customers."

www.magnachip.co.kr

 

 


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