The GS-065 range has been developed for sub-1kW power applications in consumer level power supply products such as AC adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, and appliance motor drives.
The 650V enhancement mode GaN HEMTs are packaged in thermally efficient, low cost PDFN packages with small 5.0 x 6.0 mm footprint. The specific device ratings are 3.5 A, 8 A, and 11 A, ranging in RDS(on) from 500 mΩ to 150 mΩ. Design benefits include low inductance, 5x6 footprint, and the three parts in the same footprint.
The discrete devices to maximize design freedom, accommodate varied power levels, and allow power system engineers to maintain design control and change parameters to meet specific requirements such as EMI emissions. The EZDrive circuit in the evaluation kit demonstrates a circuit design that eliminates the need for a discrete driver. The result is a low-cost solution that offers more design flexibility, reduces the number of components, and is easy to implement all while providing the many benefits of GaN. It is adaptable to many power levels, switching frequencies, and LLC/PFC controllers.
The GaN power transistors enable improved and new system designs for sleeker and lightweight electronic devices, faster charging systems, and more. For example, using GaN transistors result in AC adapters that are five times smaller and wireless charging solutions that have 50 times more wireless transfer transmit power.
“Combining our reliable GS-065 products with the EZDrive circuit empowers designers to easily take advantage of GaN by helping them achieve the power densities they want and offering the flexibility they need. For appliance customers, these devices offer great efficiency and large-scale SMD manufacturing benefits,” said Larry Spaziani, Vice President of Sales & Marketing at GaN Systems.