Infineon Technologies and Panasonic are to jointly develop a second generation of 650V gallium nitride (GaN) technology on 200mm silicon wafers for launch in 2023.
The GaN-on-Si wafer production mark Infineon’s strategic expansion into the growing demand for GaN power semiconductors for high- and low-power SMPS applications, renewables, motor drive applications.
The specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs mean the GaN HEMTs are suitable for high-speed switching. This leads to power savings and total system cost reduction, operation at higher frequencies, improved power density, and overall system efficiency. The move to 200mm wafers will boost volumes and drive down device costs.
- Infineon shows production GaN devices
- 600V GaN family for applications in the 30 to 500 W power
- Panasonic boosts GaN technology with integrated power switch
- GaNdalf PFC reference design board hits 99 percent efficiency
“In addition to the same high reliability standards as for Gen 1, with the next generation customers will benefit from even easier control of the transistor as well as a significantly improved cost position, thanks to moving to an 8in wafer manufacturing,” said Andreas Urschitz, President of Infineon’s Power and Sensor Systems Division.
Like the first generation 600V CoolGaN and X-GaN devices, the second generation will be based on the normally-off GaN-on-silicon transistor structure with a hybrid-drain-embedded gate injection transistor (HD-GIT) (shown above).
“We are delighted to extend our partnership and collaboration with Infineon on GaN components. Within the joint approach, we will be able to apply Gen1 and Gen2 devices on high quality and based on latest innovation developments”, says Tetsuzo Ueda, Associate Director of Engineering Division, Industrial Solutions Company, Panasonic Corporation.
The market launch of the 650 V GaN Gen2 devices is planned for the first half of 2023.
Other GaN articles
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- GaN system-in-package range extends to 200W
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