Infineon first to move to 300mm wafer for 1200V IGBTs

July 30, 2018 //By Nick Flaherty
Infineon first to move to 300mm wafer for 1200V IGBTs
Infineon Technologies is launching a new family of 1200 V IGBTs using 300mm (12in) wafers for the first time.

The TRENCHSTOP IGBT6 family is the first discrete IGBT duopack on the market manufactured on the larger wafers to boost volume and reduce cost. Tests show the new versions increse efficiency by 0.2 percent as a drop in replacement for the previous devices.

The IGBT6 devices are aimed at hard switching and resonant topologies operating at switching frequencies from 15 kHz to 40 kHz such as uninterruptible power supply (UPS), solar inverters, battery chargers, and energy storage.

The 1200 V TRENCHSTOP IGBT6 is released in two families. The S6 series features the best trade-off between a low saturation voltage of V CE(sat) of 1.85 V and low switching losses. The H6 series is optimized for low switching losses and provides the 0.2 percent improvement over the Highspeed3 IGBT. The positive temperature coefficient allows easy and reliable device paralleling. Additionally, the very good R g controllability permits adjusting the switching speed of the IGBT to the requirements of the respective application.

The 1200 V TRENCHSTOP IGBT6 families are in volume production on 300mm. The product portfolio comprises 15 A and 40 A co-packed with a half- or full-rated freewheeling diode in a TO-247-3 package. An industry leading current density for a discrete IGBT is delivered by the 75 A variant co-packed with a 75 A freewheeling diode in TO-247PLUS 3pin or 4pin package.

www.infineon.com/igbt6-1200v.


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