II-VI plans 2500V SiC MOSFET

August 26, 2021 // By Nick Flaherty
II-VI plans 2500V SiC MOSFET
II-VI is developing a 2500V silicon carbide MOSFET according to a report from Korea.

II-VI Korea held a SiC MOSFET Seminar ' and announced its SiC semiconductor and module business strategy in collaboration with GE.

“We plan to jointly develop and mass-produce SiC MOSFET-based semiconductors and modules in cooperation with GE, which has accumulated SiC technology for over 30 years. We will expand the competitiveness of GE and II-VI, which focused on the aviation sector, to the automobile market too,” said Seong-Jun Kim, Vice President of SiC Business in the report from etnews in Korea.

II-VI signed a large-scale patent license agreement with GE last year. “In order to pioneer new markets (such as automotive semiconductors), we have established a system for jointly developing SiC power semiconductors and modules with GE’s patented technology and for mass production by II-VI,” said Kim.

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The main focus is mainstream 1200V and 1700V devices for the automotive market but II-VI also plans to develop 2500V devices with GE says the report. The two companies will also carry out joint marketing to target new markets.

This follows the announcement of a $1bn investment in Sic technology over the next ten years by II-VI to increase production 6 to 7 times within five years.

“We are considering securing manpower and expanding infrastructure to supply SiC products for automobiles in Korea as well. As there is no small domestic demand for SiC, we will engage in various cooperation with our customers,” said Young-tae Lee, president of II-VI Korea.

II-VI last year acquired European SIC materials supplier Ascatron as part of its move into the market. Yesterday onsemi announced the acquisition of US SiC material supplier GT Advanced

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