Hybrid silicon carbide IGBT boost : Page 2 of 2

May 01, 2019 //By Christoph Hammerschmidt
Hybrid silicon carbide IGBTs
At the upcoming PCIM Europe 2019 trade show, ON Semiconductor will exhibit a new silicon-carbide (SiC) based hybrid IGBT and associated isolated high current IGBT gate driver. Co-packaged with a silicon-based IGBT with SiC Schottky diode technology, the products combine both the efficiency benefits of the SiC technology with the cost advantage of silicon.
high reliability. The devices feature complementary inputs, open drain fault and ready outputs, an active Miller clamp, accurate undervoltage lockout (UVLO), DESAT protection with soft turn off, negative gate voltage pin and separate high and low driver outputs for system design flexibility.

The galvanic isolation is rated at greater than 5 kVrms which meets the requirements of UL1577; the working voltage is greater than 1200 V; and the devices guarantee 8 mm creepage distance (input > output) to meet reinforced safety isolation requirements.   NCD(V)57000 devices can source 7.8 A drive current and sink 7.1 A which is more than three times the capability of some competing devices. More importantly, they also have a greater current capability while operating in the Miller plateau which, when combined with their advanced protection features, makes them best-in-class IGBT drivers.

More information: https://www.onsemi.com.

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