High power GaN switching targets servers and automotive

November 14, 2018 //By Nick Flaherty
High power GaN switching targets servers and automotive
French gallium nitride (GaN) startup ExasGan has launched power transistors and intelligent, fast-switching devices aimed at automotive and server applications

With drain-source on resistance (RDSon) capabilities ranging from 30 milliohms to 65 milliohms, the G-FET and G-DRIV devices provide enhanced performance and power efficiency for diverse applications including electric vehicles (EV), industrial equipment and compute server power supplies in data centres.

At this week’s Electronica trade show in Munich, Exagan is demonstrating the use of the devices in kilowatt-range applications using topologies such as totem-pole PFC to achieve high conversion efficiency as well as improved power density.

Power supplies for the fast-growing server market are one of the first power applications to benefit from the 650V and 1200V GaN technology. Global servershipments increased 20.7 percent year over year to 2.7 million units in the first quarter of 2018, according to the research firm International Data Corporation.

Another sector to benefit from these enhanced products is automotive power electronics. “Our G-FET and G-DRIVE product lines offer the most comprehensive portfolio of easily integrated GaN solutions for an extensive range of applications spanning consumer, server and automotive markets,” said Frédéric Dupont, chief executive officer of ExaGan. “To work closely with our customers, we recently opened application centres in France and Taiwan focused on delivering the most competitive GaN-based solutions for current and emerging power-conversion needs.”

The devices are built on an established 200mm CMOS manufacturing process while maintaining full control of Exagan’s proprietary GaN technology. Engineering samples of Exagan’s newest GaN solutions with associated evaluation boards are available.

The Grenoble-based company is a spin off from CEA-Leti and Soitec founded in 2014 to accelerate the power-electronics industry’s transition from silicon-based technology to GaN-on-silicon technology, enabling smaller and more efficient electrical converters. Strategic partners include X-FAB Silicon Foundries and CEA-Leti for 200mm GaN technology and manufacturing and TÜV NORD GROUP for product quality, testing and reliability.

www.exagan.com

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