Rohm has developed a new device structure to boost the gate-source voltage of its 150V gallium nitride (GaN) HEMT transistor from 6V to 8V. This provides more margin for designs, improving performance and reliability at switching frequencies over 1MHz.
The higher gate voltage allows lower power consumption and greater miniaturization of power supplies for base stations and data centres. The GaN devices are using in 48V input buck converter circuits for data centres and base stations as well as boost converter circuits for the power amplifier block of base stations. The HEMT GaN devices can also be used for Class D audio amplifiers, LiDAR drive circuits and wireless charging circuits for portable devices.
Rohm has developed GaN devices for high frequency operation above 1MHz in the medium voltage range alongside a range of silicon carbide (SiC) transistors through a deal with GaN Systems. The design that increases the rated gate-source voltage allows Rohm to propose a wider range of power solutions for a variety of applications.
The low rated gate-source voltage and an overshoot voltage exceeding the maximum rating during switching pose major challenges to GaN device reliability. To address this, a new gate structure design raises the gate-source voltage from the typical 6V to 8V. This makes it possible to both improve the design margin and increase the reliability of power supply circuits using GaN devices that require high efficiency.
Rohm is also developing a dedicated package that facilitates mounting and delivers improved heat dissipation, enabling easy replacement of existing silicon devices while simplifying handling during the mounting process.
Rohm plans to accelerate the development of GaN devices based on this technology, with sample shipment planned for September 2021.
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