Infineon Technologies has added reinforced isolation to its gate driver families with VDE 0884-11 certification.
The EiceDRIVER X3 Compact (1ED31xx) and the EiceDRIVER X3 Enhanced Analog (1ED34xx) and Digital (1ED38xx) gate driver families now offer variants with superior reinforced isolation for higher application safety and long operating life.
With 8 mm wide-body packages, both families are suitable for applications with demanding isolation requirements including industrial drives, solar systems, uninterruptible power supplies, EV charging and other industrial applications.
The EiceDRIVER X3 Compact family provides driving currents of 5.5, 10 and 14 A and optimized propagation delays of 90 ns. The family also includes a Miller clamp that is highly recommended for SiC MOSFET 0 V turn-off. With these features, the 1ED31xx is suitable for high switching frequency applications, IGBT7 and power switches with voltage ratings up to 2300 V.
The EiceDRIVER X3 Enhanced Analog and Digital families offer precise and adjustable DESAT, as well as additional configurable parameters based on I 2C. This supports high flexibility in designs and reduces hardware complexity and evaluation time. Furthermore, the built-in monitoring functionality enables predictive maintenance.
The EiceDRIVER X3 Enhanced 1ED34xx and 1ED38xx as well as the EiceDRIVER X3 Compact 1ED31xx can be ordered now, as can the evaluation boards EVAL-1ED3121MX12H, EVAL-1ED3122MX12H, EVAL-1ED3124MX12H, EVAL-1ED3491MX12M.
Related gate driver articles
- HV driver with 6kV isolation in a SO-8W package
- Flip chip package increases power density
- 200V half-bridge driver in SOIC-8 package
Other articles on eeNews Power
- Fluence and Northvolt to co-develop battery technology for Grid-scale energy storage
- Global consortium for power system operators and research institutes
- Addionics, Saint-Gobain Ceramics team on solid state battery tech
- Lead perovskite boosts solar cell efficiency over 25 percent
- 200kW SiC inverter hits 99 percent efficiency
- II-VI expands SiC processing in China