GaN Systems, ON Semi team for 100V eval board

December 04, 2020 // By Nick Flaherty
GaN Systems, ON Semi team for 100V eval board
Two power transistors from GaN Systems are used on the GS-EVB-HB-61008P-ON 100V High-Speed, Half-Bridge evaluation board with a driver from On Semiconductor

GaN Systems has launched a 100V High-Speed, Half-Bridge Evaluation Board in collaboration with On Semiconductor.

The board is developed for existing and new PCB designs and allows power electronics designers to easily evaluate GaN for growing 48V market applications, including non-isolated step-down converters, non-isolated step-up converters, and half-bridge and full-bridge converters. 

The evaluation board includes an OnSemi NCP51810 GaN driver and two GS61008P 100V E-mode GaN power transistors connected in a high-side, low-side configuration and all necessary drive circuitry. It can be applied in any topology that requires the use of a high-side/low-side FET combination. When connected into an existing power supply, it can replace HS/LS drives and MOSFETs. The evaluation board also offers configurable dead-time control and driver enable/disable functions.

One of the major benefits is the evaluation board’s small size with several pins are available to probe the circuit. HS and LS gate drives, as well as SWN are accessible. Additional benefits include fast propagation delay of 50 ns max, increased efficiency and allows paralleling, and control of rise and fall time for EMI tuning. 

The OnSemi NCP51810 high-speed gate driver is designed to meet the requirements of driving E-mode GaN HEMT power switches in half-bridge power topologies. Features include 150V, high-side and low-side gate driver, 200 V/ns dV/dt rating, and offers protection functions such as an independent under-voltage lockout (UVLO) for high-side and low-side output stages.

The GS61008P bottom-side cooled GaN-on-silicon power transistor offers low on-resistance, low gate charge, junction-to-case thermal resistance, and high current capabilities for demanding high power applications. Additionally, the transistor features a simple gate drive (0 V to 6 V), high switching frequency (> 10 MHz), fast and controllable fall and rise times, reverse current capability, and zero reverse recovery loss. These features combine to provide very high efficiency power switching.

www.gansystems.comwww.onsemi.com

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