The GaN single chip is built on a silicon substrate (GaN-on-Si) using lateral devices. This allows the current flows parallel to the chip surface so that all connections are located on the top of the chip and connected via conductor paths. This lateral structure of the GaN components allows the monolithic integration of several components such as transistors, drivers, diodes and sensors. This then allows the higher switching frequencies and a higher power densityi n power converters as well as fast and accurate condition monitoring within the chip itself. "Although the increased switching frequency of GaN-based power electronics allows for increasingly compact designs, this results in a greater requirement for their monitoring and control. This means that having sensors integrated within the same chip is a considerable advantage," said Mönch.
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