The GaN MPW service from IGSS GaN (iGaN) enables quick tape-out of device designs for rapid prototyping. This reduces costs by sharing masks and wafers with other MPW shuttle programme partners. The service is aimed at the increasing demand for GaN devices that are capable of improving power efficiency conversion up to 50%.
IGaN has a proprietary GaN-on-Si epitaxy process overcoming common challenges such as wafer breakage, wafer bowing, 3D defects, and doping (shown above).
"We believe that the industry is ripe for a transition to GaN devices with various infrastructure coming together making it conducive to new technologies. Today, challenges around reliability have been primarily addressed, paving way for a wider adoption of GaN that is spurred by the increasingly cost-friendly manufacturing capabilities. This is where IGaN completes the supply chain,” said George Wong, President of IGaN.
The company supplies 100mm, 150mm and 200mm diameter GaN-on-Si epiwafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications as well as a standard stack of AlGaN transition layers and GaN buffer.