GaN enables 3kW/l power density for on-board charger

October 25, 2019 //By Christoph Hammerschmidt
Finepower (Ismaning, Germany) is using gallium nitride (GaN) transistors for an on-board charger (OBC) for electric vehicles.
Finepower (Ismaning, Germany) is using gallium nitride (GaN) transistors for a compact on-board charger (OBC) with a power density of 3kW/litre for electric vehicles.

Greater ranges and a denser network of powerful charging stations are urgently needed to increase the attractiveness of electric vehicles. Until then, on-board chargers will give electric cars the necessary independence, because practically every power socket can become a charging station. Due to the increasing storage size of the accumulators and the limited space available in the vehicles, however, conventional devices with silicon transistors are reaching their limits. Finepower has therefore developed an on-board charger (OBC) based on gallium nitride (GaN) which, at a power density of 3 kW/litre, exceeds the density of conventional chargers by three times.

As a result, this water-cooled OBC measuring 210 x 50 x 60 mm (without housing) is extremely compact. It can convert input voltages from 85 to 264 VAC with a maximum power of 3,600 W to DC voltages from 200 to 450 VDC. The maximum output current is 10 ADC. A single-stage IBI-LLC topology using GaN transistors at 230 VAC gives an efficiency of 97%. With 115 VAC input voltage, the efficiency is still reaching 93%. Thanks to the power factor of over 0.98, the nominal power of the supply can be skimmed off almost completely as active power.

Due to its DSP-based control technology, the OBC can be individually adapted to the respective operating conditions. Communication takes place via the standardized CAN bus. Up to three GaN chargers can be coupled together for three-phase supply, for example via three-phase sockets.

More information: https://www.finepower.com/en/


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