GaN design shrinks fast charger

August 17, 2020 //By Nick Flaherty
GaN design shrinks fast charger
Navitas Semiconductor has teamed with OPPO on a new architecture using the NV6125 integrated gallium nitride (GaN) devices and planar transformers for a 110W fast charger.

The GaN architecture has been used in the Mini SuperVOOC charger that measures 65.5 x 45.5 x 12 mm (36 cc), a fraction of the size of the 96W charger supplied with the leading laptops.

Navitas and OPPO design engineers partnered to develop a new, two-stage, high-speed (MHz) ‘Pulsed-DCX’ converter topology that allows the use of low profile planar transformers to replace legacy wire-wound transformers. The architecture also eliminates the bulky electrolytic capacitors which can take up 40 percent of silicon-based designs.

The first stage uses NV6125 GaNFast power ICs from Navitas to isolate and step-down the voltage, with the second stage controlling the current for optimal battery charging. The 110W Mini includes a Power Factor Correction (PFC) function and is rated for universal AC input. The full 110W rating is available via USB-PPS, with 65W fast charging for SuperVOOC and USB-PD protocols.

“GaN devices will trigger a technological revolution in the field of power supplies,” said Jialiang (Jeff) Zhang, Chief Charging Technology Scientist at OPPO. “Only GaN devices can support high-frequency, low-loss operation.”

“Laptop users suffer from heavy, bulky, tangled chargers every time they travel, or even just commute. The 110W Mini is the featherweight fast charger that lifts the burden,” said Stephen Oliver, Navitas’ Vice-President Marketing and Investor Relations, adding “OPPO’s dedication to fast-charging and pioneering adoption of GaNFast technology to enable new topologies is a clear game-changer. Now, consumers can carry a single, small, flexible fast charger that meets all their needs from their laptop and tablet to phone and earbuds – and charge them at incredible speed.”

www.navitas.com

 

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