EPC has launched an 80V, 12.5A power stage chip that combines a driver and gallium nitride GaN FET for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility.
The EPC2152 is a single-chip driver plus eGaN FET half-bridge power stage built with EPC’s proprietary GaN technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures 3.9 mm x 2.6 mm x 0.63 mm.
When operated in a 48 V to 12 V buck converter at 1 MHz switching frequency, the EPC2152 ePower Stage achieves a peak efficiency above 96 per cent with a solution that is 33% smaller in size on the printed circuit board (PCB) compared to an equivalent multi-chip discrete implementation.
The EPC2152 is the first offering in a family of integrated power stages available in chip scale package (CSP) as well as multi-chip quad flat modules (QFM). Within a year the family will fill out with products capable of operating at high frequency up to 3 to 5 MHz range as well as high current from 15 A to 30 A per power stage.
The integration of the driver and GaN FET makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.
“Discrete power transistors are entering their final chapter. Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced engineering required,” said Alex Lidow, CEO and co-founder of EPC. “This new family of integrated power stages is the next significant stage in the evolution of GaN power conversion, from integrating discrete devices to more complex solutions that