Infineon Technologies has launched a modular evaluation platform for testing the drive options for 1200V CoolSiC MOSFETs in TO247 3-pin and 4-pin packages.
Double pulse testing is a standard procedure for designers to learn about the switching behaviour of power devices, and the modular motherboard with interchangeable drive cards supports a range of drive options. These currently include a Miller clamp and a bipolar supply card, and additional variants will be launched in the near future.
The motherboard of the evaluation platform is split into two sections, the primary supply side and the secondary side. On the primary side, the 12 V supply and the pulse-width modulation (PWM) are connected. On the secondary side is the secondary supply of the driver, the half bridge with connections for the shunt for current measurement and the external inductance. The positive operating voltage of the drivers can be adjusted between +7.5 and +20 V, while the negative voltage can be regulated between +1 V and -4.5 V.
The motherboard was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A. For measuring at higher temperatures of up to 175°C, the heatsink can be used together with a heating element.
The cards can be used as a reference design for two drive options using driver ICs from the EiceDRIVER family for high frequency switching of SiC power devices. The first modular card contains the 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp, which is typically activated below 2 V. The second drive card includes the 1EDC Compact 1EDC60H12AH allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.
All three components of the modular evaluation platform – motherboard, Miller clamp and bipolar drive cards – can be ordered now. An additional drive card for short circuit detection will be added to the portfolio during the summer of 2020, while a card for SMD package testing will follow during the second half of the year.
More information is available at