€74m next generation silicon IGBT project starts : Page 2 of 2

June 05, 2019 //By Nick Flaherty
A thin wafer for power IGBT devices
A European project to develop the next generation of silicon power devices has started, aiming for IGBTs that operate over 1700V and can be built on ultra thin 300mm wafers.

The Power2Power partners, which includes ABB and Powernet in Finland, Powertec in Slovakia and Jiako Instruments in the Netherlands, will develop digitized pilot lines at German sites, combining different disciplines and knowledge areas in a heterogeneous power-ECS environment.

“Microelectronics is a key for successful industrial products from Germany and Europe," said Dr. Herbert Zeisel, undersecretary in the German Federal Ministry of Education and Research (BMBF). "The latest trade disputes illustrate how sovereignty and autonomy are dependent on a country's own capabilities in research and development. Power2Power shows how we can assert ourselves in the global competition. Europe, Germany, Saxony, and Thuringia are acting in concert in the ECSEL program. In the negotiations in Brussels, the BMBF will advocate for the successful ECSEL program to be continued and administration simplified after 2020.”

The European semiconductor industry employs several hundred thousand people. “An important focus is the booming market for power electronics,” said Bert De Colvenaer, Executive Director ECSEL Joint Undertaking. “With regard to the global competition – especially from Asia – Power2Power will help increase the manufacturing share of European companies on the world market and further strengthen its leading positions.”


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