The parts are built at X-Fab’s foundry in Texas using the IP and process technology from United SiC, with a capacity of 30,000 wafers a month, says Dries. The company uses three suppliers of SiC wafers.
“We have three qualified suppliers of substrates and we see no differentiation in quality for yield based on the substrate or epi for the JFETs, and we run equivalent yield s on all three suppliers,” said Dries. “Historically its important in a new material system to own the material supply but over time that becomes commoditised. That’s what happened in gallium arsenide (GaAs) and indium phosphate (InP) and I think the same thing will happen over time,” he said.