Dell moves to GaN with Navitas

December 10, 2020 //By Nick Flaherty
Dell moves to GaN with Navitas
Dell Technologies has adopted gallium nitride (GaN) for its fast chargers for the first time, using devices from Navitas Semiconductor in Dublin.

Delluses GaN for its USB-C Enhanced Power Adapter PA901, a dual-output fast charger with 90W available via USB-C cable for high-power laptop charging and an extra 10W via USB-A to simultaneously charge a smartphone. The adapter uses Dell's ExpressCharge for a quick boost of up to 35% in just 15 minutes and will charge the Dell Latitude laptop to 80 percent in under an hour.

The Navitas GaNFast power devices integrate a GaN power FET with drive, control, and protection to enable up to times the power in half the size and weight. Over 9,000,000 GaNFast power ICs have been shipped with zero failures.

“Dell customers expect innovation, performance and quality, and GaNFast technology from Navitas meets those expectations by delivering the small size, low weight and cool operation that are critical for mobile fast charging,” said Gene Sheridan, CEO and co-founder of Navitas.

“Dell’s adoption of fast-charging GaN is another blow to the old, slow, silicon chip. Navitas’ design, applications and quality teams passed a series of rigorous technology, performance and reliability reviews with Dell to ensure a safe and successful adapter launch.”

Two NV6117 GaNFast power ICs are used in the Dell adapter; one for the critical conduction mode (CrCM) boost power factor correction circuit (PFC), and one for the DC-DC quasi-resonant (QR) flyback. The adapter was designed and built for Dell by Chicony Power Technology, headquartered in Taipei with support from local Navitas application engineering.

www.navitassemi.com

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