Cree teams with Chinese power supply maker on SiC

June 09, 2021 // By Nick Flaherty
Cree teams with Chinese power supply maker on SiC
Cree is supplying Wolfspeed silicon carbide (SiC) 650V MOSFETs for the next generation of redundant data centre power supplies for Gospower in China

Shenzhen Gospower Digital Technology Co in China is to use Cree’s Wolfspeed 650V silicon carbide SiC MOSFETs for next generation Common Redundant Power Supply (CRPS) designs.

Gospower developed a 2400W/2600W 185mm CRPS solution with the SiC MOSFETS in the totem pole bridgeless power factor correction (PFC) design. This creates a highly efficient, reliable and cost-effective solution that operates under higher temperatures and features lower switching losses, zero reverse recovery and high power density, all in a smaller size.

As the demand for cloud-based storage continues to rapidly expand, Gospower will use Wolfspeed’s silicon carbide technology to deliver power efficiencies that will boost China’s entire power server market and better support the country’s digital storage demands.

Server and computing power supply demands are increasing significantly due to rapid developments in the cloud, artificial intelligence, distributed storage and 5G industries. Wolfspeed’s 650V silicon carbide MOSFETs offer high efficiency through low switching and conduction losses, as well as high power density features including smaller footprints, lighter weight and fewer components. Customers benefit from lower total cost of ownership through the more efficient use of power, reduced cooling requirements and industry-leading reliability, enabling faster rollout of industry-leading server power supply solutions.

“To meet the growing need for a power supply solution that has higher efficiency, smaller size and high power density, we partnered with Cree to utilize its Wolfspeed® 650V silicon carbide MOSFETs to create an application that will help transform the Chinese server market. Our next generation CRPS solution will enable Gospower to be a leader in this sector and to efficiently support China’s data storage needs,” said Ruan Shiliang, CEO of Gospower.

“As a pure-play global semiconductor powerhouse, Cree is well positioned to lead the transition from silicon to silicon carbide,” said Gregg Lowe, CEO of Cree. “Across the globe, our Wolfspeed silicon carbide devices are advancing technological solutions by increasing efficiency and performance with smaller, more scalable power systems. This solution will help advance the power supply sector and is a testament to the innovations that are made possible by silicon carbide when we collaborate with industry leaders such as Gospower.”

www.cree.com

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