“The QJT is the first power device on the Bizen family roadmap. This will shortly lead to the PJT (Processor Junction Transistor), an integrated Bizen device with its own processor which can also be produced on a manufacturing cycle time of eight days, heralding a new era of intelligent power devices,” he said.
SFN has also released other comparative performance metrics for a 1200V/100A part – also in TO247 – which is on its short-term roadmap. The losses at rated current will be a quarter (<300mV) of those exhibited by the SiC device, and its input capacitance will also be four to five times less (< 1pF).
In July Semefab also started making 1200V Schottky diodes on an SiC process and is planning 1700V devices.
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