Transphorm has launched an evaluation board for and analogue single-phase AC-DC power conversion up to 4 kilowatts (kW) using its SuperGaN FET
The TDTTP4000W065AN uses the bridgeless totem-pole power factor correction (PFC) topology with a traditional analogue control. This avoids the need for firmware development required when using digital signal controllers (DSCs).
The TDTTP4000W065AN offers power systems engineers an upgrade in efficiency over standard CCM Boost PFC designs that use superjunction MOSFETs. The evaluation kit is rated at 4 kW highline (180-260 V) and 2 kW lowline (90-120 V) using Transphorm's Gen IV TP65H035G4WS 650V FET as the fast-switching leg with low-resistance Silicon MOSFETs in the slow-switching leg..
The main advantages of the analogue totem-pole design include lower maintenance power at the onset, thereby increasing overall system efficiency, and no DSP firmware programming is needed, suitable for standard CCM boost AC-to-DC PFC power stages.
This follows a digital 4kW design, the TDTTP4000W066C, launched earlier this year.
The DSC-based AC-DC board also uses the bridgeless totem-pole PFC with the company’s SuperGaN FETs. However, it integrates a dsPIC33CK DSC board from Microchip that has been preprogrammed and is backed by dedicated firmware support.
“Transphorm’s analogue evaluation board provides an unprecedented opportunity to access our highly efficient GaN in the easiest way possible. Much like the preceding digital board, it gives power system engineers a choice that the high voltage device market was previously lacking,” said Philip Zuk, VP of Worldwide Technical Marketing and NA Sales, Transphorm. “Regardless of the end application’s targeted value proposition, we have the diverse toolset and the most robust GaN possible to help you succeed.”
The 650V TP65H035G4WS FET has a 35 milliohm on-resistance in a TO-247 through-hole package with an inherently high thermal dissipation ability. This eliminates the need to parallel devices for higher power output, a design method required by competitive surface-mount GaN solutions. And, as with all other Transphorm GaN devices, the