Power device maker Alpha and Omega Semiconductor (AOS) has launched its first silicon carbide SiC MOSFET based on a new technology platform.
“After years of development work, we are excited to add this new next-generation SiC MOSFET technology. Adding to our previously released 650V GaN platform, the αSiC devices further expand our positioning for the projected multi-billion dollar wide bandgap power semiconductor market. We are committed to providing the optimal technology solution for each customer’s needs,” said David Sheridan, Sr. Director of Wide Bandgap Products at AOS.
The αSiC platform is aimed specifically at the industrial and automotive markets. It minimises both AC and DC power losses through a low gate resistance (RG) design combined with the low increase in on-resistance (RDS,ON) over temperature.
This allows the αSiC technology to achieve high efficiencies across a wide range of application switching frequencies and temperatures up to 175˚C. This reduces system costs and total bill-of-materials for the many industrial uses, including solar inverters, UPS systems, and EV inverter and charging systems.
The first product release for the platform is the AOK065V120X2, a 1200V 65mΩ SiC MOSFET available in a TO-247-3L package.
To simplify system design, the AOK065V120X2 is designed to be driven with a -5V/+15V gate drive compatible with existing high voltage IGBT and SiC gate drivers. Operation with a unipolar drive is also possible with optimized system design.
The αSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options with full AEC-Q101 qualification.
As part of the first wave release, the AOK065V120X2 is immediately available for production quantities.