950V superjunction MOSFET for PFC and flyback topologies

August 23, 2018 //By Nick Flaherty
950V superjunction MOSFET for PFC and flyback topologies
Infineon Technologies has launched a 950V superjunction MOSFET for higher density, low-power switch mode power supply (SMPS) designs that require high voltage devices.

The CoolMOS P7 meets the design requirements for lighting, smart meter, mobile charger, notebook adapter, AUX power supply and industrial SMPS applications. The DPAK packaging provides surface mount assembly with lower RDS (on), enabling higher density power factor correction (PFC) and flyback designs. The V GS(th) threshold voltage and V GS(th) tolerance make the MOSFET easy to drive and design-in. Similar to the other members of the P7 family, it integrates a Zener diode for ESD protection. This results in better assembling yields and less cost with less ESD related production issues.

The 950 V CoolMOS P7 enables up to 1 percent efficiency increase and from 2˚C to 10˚C lower MOSFET temperature for more efficient designs. This component offers also up to 58 percent lower switching losses compared to previous generations of the CoolMOS family.

The device comes in TO-220 FullPAK, TO-251 IPAK LL, TO-252 DPAK, and SOT-223 packaging. This makes it possible to change from THD to SMD device.

The 950 V CoolMOS P7 is now available.


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