Toshiba has added 80V N-channel power MOSFETs to its U-MOS X-H range for switching power supplies in data centres and communication base stations. The range includes the TPH2R408QM in a small outline SOP Advance surface mount package and the TPN19008QM in a TSON Advance package.
The drain-source on resistance (RDSon) in the 80V U-MOS X-H products is approximately 40 per cent lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics has also been improved by optimising the device structure. As a result, the devices have a power dissipation of 210W for both devices.
Compared with TPH4R008NH (U-MOS VIII-H series), the TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15 per cent, drain-source On-resistance x gate switch charge by approximately 10 per cent, and driain-source On-resistance x output charge by approximately 31 per cent. The RDSon of the MOSFETs is 2.43mΩ (max) @VGS=10V for the TPH2R40QM and 19mΩ (max) @VGS=10V for the TPN19008QM.
(Unless otherwise specified, @Ta=25℃)
Drain-source voltage VDSS (V)
Drain current (DC) ID (A)
Channel temperature Tch (℃)
RDS(ON) max (mΩ)
Total gate charge (gate-source plus gate-drain)
Qg typ. (nC)
Gate switch charge Qsw typ. (nC)
Output charge Qoss typ. (nC)
Input capacitance Ciss typ. (pF)
Size typ. (mm)
Shipments start today.