650V SiC MOSFET for industrial and EV designs: Page 2 of 2

April 01, 2020 //By Nick Flaherty
Cree’s 650V silicon carbide SiC MOSFET is aimed at power designs in data centres, telecoms networks and on-board chargers in electric vehicles such as the 6.6kW reference design shown
Cree’s 650V silicon carbide SiC MOSFET is aimed at power designs in data centres, telecoms networks and on-board chargers in electric vehicles

The devices have been used in a reference design for a 6.6kW bidirectional AC-DC and DC-DC battery charger (above). The demo board consist of a Bi-Directional Totem-Pole power factor correction (PFC) AC-DC stage and an isolated bi-directional DC-DC stage based on a CLLC topology with a variable DC link voltage.

The OBC accepts 90VAC-265VAC as an input and provide 250VDC-450VDC at the output with over 96.5 per cent conversion efficiency in both charging and inversion modes. Documentation for the reference design includes a bill of materials (BOM), schematic, board layout and the application note

Wolfspeed’s 650V SiC MOSFET family is available now in TO-247 3 and 4 pin packages as well as a TO-263 7 pin package.

www.wolfspeed.com/650v-mosfets

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