Cree has launched a 650V SiC MOSFET family with low on resistance for a wide range of industrial and vehicle charger designs.
The Wolfspeed C3M0015065x family has 15 mΩ and 60 mΩ 650V devices, handling currents from 36A to 120A. These use Cree’s industry-leading, third generation C3M SiC MOSFET technology that provides 20 per cent lower switching losses than other devices. This provides a lower total cost of ownership in a variety of applications through the more efficient use of power, reduced cooling requirements, and higher reliability.
“Cree is leading the global transition from silicon to silicon carbide, and our new 650V MOSFET family is the next step in delivering a high-powered solution to a broader application base, including industrial applications everywhere,” said Cengiz Balkas, senior vice president and general manager of Wolfspeed. “The 650V MOSFETs deliver power efficiencies that help today’s biggest technology leaders create the next generation of onboard EV charging, data centers, and energy storage solutions to reshape our cloud and renewable energy infrastructures.”
Compared to silicon, the Wolfspeed 650V SiC MOSFET deviced have 75 per cent lower switching losses and half the conduction losses which results in a potential 3x increase in power density. This allows design engineers to meet and exceed industry efficiency standards, including the 80 Plus Titanium requirements for server power.
The 650V SiC MOSFET family provides increased efficiencies and faster switching for smaller OBC designs. The devices also enable bi-directionality in OBCs without compromising the size, weight and complexity of the solution. Cree says its experience with automotive AEC-Q101 qualification, proven in the E-series MOSFET family paves the way for future automotive qualified 650V SiC MOSFETs.