Nexperia has started volume production of its second generation 650V gallium nitride (GaN) cascode transistors, aiming at high efficiency 2kW power supplies and solar inverters. This follows the initial push into automotive designs for the parts.
The H2 GaN family has an RDS(on) resistance down to 35 mΩ (typical) for single phase AC-DC and DC-DC industrial switched mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially server and telecoms supplies that must meet 80 Plus Titanium efficiency regulations. The devices are also an excellent fit for solar inverters and servo drives in the same power range.
Available in TO-247 packaging, the GAN041-650WSB GaN family is 36 percent smaller than the previous generation for a given RDS(on) value. The cascode configuration eliminates the need for complicated drivers, speeding time to market and can be used for both hard-switching and soft-switching configurations.
“Titanium is the most demanding of the 80 Pplus specifications, requiring >91 % efficiency under full load conditions (>96% at 50% load). Achieving this level of performance in server power applications operating at 2 kW and above, using conventional silicon components, is complex and challenging. Nexperia’s new power GaN FETs are ideally suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs,” said Dilder Chowdhury, GaN Strategic Marketing Director at Nexperia.
The GAN041-650WSB GaN cascode FETs are now available in high volume.
Related GaN articles
- Nexperia, Ricardo team on inverter demonstrator
- Nexperia upgrades UK fab as part of power focus
- Nexperia looks to re-brand 'application specific MOSFETs'
Other articles on eeNews Power