650V GaN FET for 3kW power supplies

August 11, 2021 // By Nick Flaherty
650V GaN FET for 3kW power supplies
GaN Systems has launched two 650V enhanced mode GaN FET transistors, one for consumer design and another that can take power supply designs up to 3kW

The GS-065-030-2-L FET is a 650 V, 30A, 50 mΩ bottom-side cooled transistor and has the lowest RDS(on) in GaN Systems' PDFN product family. This allows lower power loss and higher power rating for data centre, industrial, and 5G applications such as telecom and server SMPS, motor drives, energy storage systems, and Bridgeless Totem Pole PFC power supply design sup to 3KW.

The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor ideal for consumer electronics applications such as chargers and adapters. Pricing starts at GBP6.22 from Mouser in the UK.

Both are packaged in a standard 8×8 mm PDFN package.

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"GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made with every new generation of products so that customers can maximize the benefits of GaN. With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics," said Jim Witham, CEO at GaN Systems.


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