Navitas Semiconductor has launched a 650V integrated gallium nitride GaN power chip with peak 800V operation for 500W chargers.
The NV6128 GaNFast power IC is a monolithic integration of FET, drive and logic in a 6 x 8 mm PQFN package for high-power mobile and consumer power designs. The 70 mOhm NV6128 represents a 66 percent increase in current capability over the previous version with a proprietary, integrated cooling pad on the package for high-efficiency, high-density power systems.
“GaNFast power ICs have been broadly adopted by tier-1 names like Lenovo, Dell, OPPO and Xiaomi for fast-charging mobile adapters up to 200W, with over 13,000,000 shipped and zero failures,” said Gene Sheridan, CEO and co-founder of Navitas. “With the higher-power NV6128, we extended the effective power range to 500W for the consumer market and look beyond that to multi-kW data center, eMobility and new energy applications.”
The NV6128 is rated at 650V for nominal operation with a high, 800V peak capability for robust operation during transient events. The GaN gate is fully protected and the whole device rated at an industry-leading electrostatic discharge (ESD) specification of 2kV.
“Compared to current tier-1 OEM laptop adapters using silicon in traditional diode rectification and boost PFC topologies at 50-70kHz, the GaNFast NV6128 enables a modern high-speed totem-pole architecture and complete 300W solutions at over 1.1W/cc. That’s up to three times smaller and lighter with existing 200kHz control. When you crank up the speed to MHz+, you get another major step-increase in power density," said Dan Kinzer, Navitas CTO/COO and co-founder. “It’s a night and day comparison.”
The NV6128 is aimed at 200W to 500W power applications such as all-in-one PCs, TVs, game consoles, eMobility chargers for eScooters and eBikes as well as higher power gaming laptops.