Vishay Intertechnology's latest 60V MOSFET is the first to be optimized for standard gate drivers to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK 1212-8S package. The Vishay Siliconix SiSS22DN TrenchFET Gen IV n-channel power 60V MOSFET increases efficiency and power density in switching topologies thorough a gate charge of 22.5 nC and output charge (QOSS) of 34.2 nC.
Unlike logic-level 60 V devices, the typical VGS(th) threshold voltage and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6 V. This allows the 60V MOSFET to have short dead-times and prevent shoot-through in synchronous rectifier applications. The SiSS22DN's industry-low on-resistance is 4.8 % lower than other devices and rivals the leading logic-level device, while the QOSS of 34.2 nC boosts power conversion designs employing zero voltage switching (ZVS) or switch-tank topology. To achieve higher power density, the device uses 65 % less PCB space than similar solutions in 6 mm by 5 mm packages.
The SiSS22DN's specifications are fine-tuned to minimize conduction and switching losses simultaneously. The result is increased efficiency that can be realized in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies; primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions.