The AOZ5131QI modules measure 5 x 5mm and deliver up to 60A. The module integrates a dual gate driver and two asymmetric MOSFETs in a 31-pin QFN package to produce a high power and high-efficiency power stage for synchronous step-down applications. The standard 5mm x 5mm QFN package is designed to provide maximum power density with low parasitic inductance and minimal EMI signature.
"The AOZ5131QI is the latest addition to our QFN5x5 standard package footprint series. By integrating FETs optimized for 12V input, the new device enables high efficiency and high-power density to satisfy the ever increasing customers' demand for higher performance in smaller and more power efficient products," said Mehdy Khotan, Product Marketing Director for DrMOS product line at Alpha and Omega Semiconductor.
The input voltage ranges from 4.5V to 18V with a switching frequency up to 2MHz and a driver input of 4.5 to 5.5V. The high side MOSFET is optimised to achieve low capacitance and gate charge for fast switching with low duty cycle operation while the low side MOSFET has a low ON resistance to minimise conduction loss.
The AOZ5131QI is intended for use with TTL and Tristate compatibility by using both the PWM and/or FCCM inputs for accurate control of the power MOSFETs. The bootstrap diode is integrated in the driver and the low side MOSFET can be driven into diode emulation mode to provide asynchronous operation when required. The pinout is optimised for low inductance routing of the converter, keeping the effect of parasitics to a minimum.
The AOZ5131QI is immediately available in production quantities with a lead-time of 12 weeks. The unit price for 1,000 pieces is $2.20.